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0–90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

0–90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

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An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0–90 GHz bandwidth. This is the widest bandwidth among all reported baseband amplifier ICs to date.

References

    1. 1)
      • R. Majidi-Ahy , C.K. Nishimoto , M. Riaziat , M. Glenn , S. Silverman , S.-L. Weng , Y.-C. Pao , G.A. Zdasivk , S.G. Bandy , Z.C.H. Tan . 5–100 GHz InP coplanar waveguide MMIC distributed amplifier. IEEE Trans. , 1986 - 1993
    2. 2)
      • S. Deibele , J.B. Beyer . Attenuation compensation in distributed amplifier design. IEEE Trans. , 1425 - 1433
    3. 3)
      • Y. Umeda . Silicon nitride passivated ultra low noise InAlAs/InGaAs HEMTs with n+-InGaAs/n+-InAlAscap layer. IEICE Trans. Electron , 649 - 655
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19951032
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