Hydrogenation of InN and InGaN
Electrical passivation by atomic hydrogen of native donors in epitaxial InN and InGaN has been studied as a function of the hydrogen plasma process parameters. In electron cyclotron resonance discharges, the passivation efficiency increases with microwave power but decreases with pressure. The InN surface is susceptible to degradation by preferential loss of N during the hydrogenation. The reactivation of the donors in both materials occurs with the same characteristics around ~500°C, suggesting a common origin.
