High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance, are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5 mA, 1 mW of optical power is delivered with an intensity of 280 µW/sr.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19950884
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content/journals/10.1049/el_19950884
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