The fabrication of planar, proton implanted vertical-cavity lasers (VCSELs) with low threshold voltages of 1.8 V and high wallplug efficiencies of 17.6% for top surface emission is reported. The maximum output power of 25 µm devices is 12.5 mW. Layer structures containing simple single-step graded AlGaAs-GaAs Bragg reflectors were grown by solid source molecular beam epitaxy with beryllium as p-type dopant.
Inspec keywords: aluminium compounds; gallium arsenide; surface emitting lasers; molecular beam epitaxial growth; optical fabrication; ion implantation; beryllium; semiconductor lasers; III-V semiconductors
Other keywords:
Subjects: Vacuum deposition; Epitaxial growth; Semiconductor doping; Laser resonators and cavities; Semiconductor lasers; Lasing action in semiconductors; Laser resonators and cavities; Optical fabrication, surface grinding
References
-
-
1)
- Tan, M.R.T., Houng, K.H., Wang, S.Y., Yuen, A.T., Zhang, T., Lei, C.: `Design, characteristics and reliability of a large area surface emittinglaser (SEL)for multimode data link applications', 14th IEEE Semicon. Laser Conf., Sept. 1994, Maui, USA, p. 177–178.
-
2)
- Lear, K.L., Schneider, R.P., Choquette, K.D., Kilcoyne, S.P., Figiel, J.J., Zolper, J.C.: `Vertical-cavity surface-emitting lasers with 21% efficiency by metalorganicvapor phase epitaxy', Proc. 14th IEEE Semicon. Laser Conf., Sept. 1994, Maui, USA, p. 181–182.
-
3)
- E. Zeeb , K.J. Ebeling . Potential barriers and current-voltage characteristics of p-doped gradedAlAs-GaAs heterojunctions. J. Appl. Phys. , 3 , 993 - 999
-
4)
- R.F. Kopf , E.F. Schubert , S.W. Downey , A.B. Emerson . N- and P-type dopant profiles in distributed Bragg reflector structuresand their effect on resistance. Appl. Phys. Lett. , 15 , 1820 - 1822
-
5)
- A. Scherer , J.L. Jewell , M. Walther , J.P. Harbison , L.T. Florez . Fabrication of low threshold voltage microlasers. Electron. Lett. , 13 , 1224 - 1226
-
6)
- Zeeb, E., Hackbarth, T., Ebeling, K.J.: `High power vertical-cavity laser diodes', Proc. 23rd Europ. Solid State Device Conf., 1993, Grenoble, France, p. 873–875.
-
7)
- J.W. Scott , B.J. Thibeault , D.B. Young , L.A. Coldren , F.H. Peters . High efficiency submilliamp vertical cavity lasers with intracavity contacts. IEEE Photonics Technol. Lett. , 6 , 678 - 680
-
8)
- Zeeb, E., Moeller, B., Hackbarth, T., Leier, H., Ebeling, K.J.: `Independently addressable vertical-cavity laser arrays for high bit ratedata transmission', Proc. 20th Europ. Conf. on Opt. Commun., Sept. 1994, Firenze, Italy, p. 343–347.
-
9)
- Wipiejewski, T., Panzlaff, K., Zeeb, E., Weigl, B., Ebeling, K.J.: `Efficient alignment tolerant coupling of vertical-cavity lasers to single-modefibers', Proc. 19th Europ. Conf. on Opt. Commun., Sept. 1993, Montreux, Switzerland, p. 333–336.
-
10)
- M.G. Peters , D.B. Young , F.H. Peters , J.W. Scott , B.J. Thibeault , L.A. Coldren . 17.3% peak wall plug efficiency vertical-cavity surface-emittinglasers using lower barrier mirrows. IEEE Photonics Technol. Lett. , 1 , 31 - 33
-
1)
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