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Improved free-standing semi-insulating GaAs membranes for sensor applications

Improved free-standing semi-insulating GaAs membranes for sensor applications

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Low dose 4 MeV nitrogen implantation into n-GaAs is used to fabricate a compensated surface layer which is etched to produce a 2.5 µm thick semi-insulating GaAs membrane. The versatility of this process is demonstrated by the fabrication of a complex free standing 5.3 mm long 70 µm wide coiled membrane.

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