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High performance GaAs JFET with shallow implanted Cd-gate

High performance GaAs JFET with shallow implanted Cd-gate

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Shallow p+-regions in GaAs, formed by Cd ion implantation, have been used as the gate region for GaAs JFETs. 0.7 µm gate length JFETs demonstrated a transconductance of 165 mS/mm, a saturation current of 130 mA/mm, an ft of 26 GHz, and an fmax of 42 GHz. These frequency metrics are superior to previous Zn-gate JFETs of similar dimensions.

Inspec keywords: III-V semiconductors; junction gate field effect transistors; gallium arsenide; cadmium; ion implantation

Other keywords: JFET; saturation current; 42 GHz; Cd ion implantation; shallow implanted Cd-gate; 165 mS/mm; 26 GHz; 0.7 micron; GaAs:Cd; transconductance; shallow p+-regions

Subjects: Semiconductor doping; Other field effect devices

References

    1. 1)
      • S.J. Pearton , J.S. Williams , K.T. Short , S.T. Johnson , D.C. Jacobson , J.M. Poate , J.M. Gibson , D.O. Boerma . Implantation temperature dependence of electrical activation, solubility,and diffusionof implanted Te, Cd, and Sn in GaAs. J. Appl. Phys. , 1089 - 1098
    2. 2)
      • M.E. Sherwin , J.C. Zolper , A.G. Baca , R.J. Shul , A.J. Howard , D.J. Rieger , J.F. Klem , V.M. Hietala . An all implanted self-aligned n-JFET with Zn gates for GaAs digital applications. IEEE Electron Device Lett. , 7 , 242 - 244
    3. 3)
      • M.E. Sherwin , J.C. Zolper , A.G. Baca , T.J. Drummond , R.J. Shul , A.J. Howard , D.J. Rieger , R.P. Schneider , J.F. Klem . Comparison of Mg and Zn implants for GaAs n-channel JFETs. J. Electron. Mater. , 8 , 809 - 818
    4. 4)
      • Wilson, M.R., Chasson, D.E., Krongard, B.S., Rosenberry, R.W., Shah, N.A., Welch, B.M.: `Process optimization of high performance ion implanted GaAs JFETs', Tech. Dig. 14th Annual IEEE Gallium Arsenide IC Symp., 1992, p. 169–172.
    5. 5)
      • J.C. Zolper , A.G. Baca , R.J. Shul , A.J. Howard , D.J. Rieger , M.E. Sherwin , M.L. Lovejoy , H.P. Hjalmarson , B.L. Draper , J.F. Klem , V.M. Hietala . An all-implanted, self-aligned, GaAs JFET with a non-alloyed W/p+-GaAsohmic gate contact. IEEE Trans. , 1078 - 1082
    6. 6)
      • J.C. Zolper , M.E. Sherwin , A.G. Baca , R.J. Shul , J.F. Klem , V.M. Hietala . Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET usinga carbon buriedp-implant. IEEE Electron Device Lett. , 12 , 493 - 495
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