Shallow p+-regions in GaAs, formed by Cd ion implantation, have been used as the gate region for GaAs JFETs. 0.7 µm gate length JFETs demonstrated a transconductance of 165 mS/mm, a saturation current of 130 mA/mm, an ft of 26 GHz, and an fmax of 42 GHz. These frequency metrics are superior to previous Zn-gate JFETs of similar dimensions.
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