Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers
Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers
- Author(s): K. Nakahara ; K. Uomi ; T. Tsuchiya ; A. Niwa
- DOI: 10.1049/el:19950572
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- Author(s): K. Nakahara 1 ; K. Uomi 1 ; T. Tsuchiya 1 ; A. Niwa 1
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View affiliations
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Affiliations:
1: Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
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Affiliations:
1: Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
- Source:
Volume 31, Issue 10,
11 May 1995,
p.
809 – 811
DOI: 10.1049/el:19950572 , Print ISSN 0013-5194, Online ISSN 1350-911X
Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 µm InGaAsP strained multiquantum well lasers for the first time.
Inspec keywords: III-V semiconductors; delays; indium compounds; gallium arsenide; carrier lifetime; doping profiles; quantum well lasers
Other keywords:
Subjects: Semiconductor doping; Semiconductor lasers; Impurity concentration, distribution, and gradients; Lasing action in semiconductors; Design of specific laser systems; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
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