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Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers

Reduced turn-on delay time in 1.3 µm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers

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Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 µm InGaAsP strained multiquantum well lasers for the first time.

References

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