Hydrogen incorporation in GaN, AlN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

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Hydrogen incorporation in GaN, AlN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

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Hydrogen concentrations up to ~1020 cm-3 in GaN and AlN and ~1019 cm-3 in InN are found to be incorporated during ECR plasma etching in Cl2/CH4/H2Ar at 170°C. Even very short duration (40 s) etch treatments produce hydrogen incorporation depths ≥0.2 µm ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450 – 500°C restores the initial conductivity.

Inspec keywords: semiconductor doping; doping profiles; aluminium compounds; electrical conductivity; sputter etching; III-V semiconductors; gallium compounds; indium compounds; hydrogen; passivation

Other keywords: H incorporation; 17 C; H concentrations; AlN; GaN; GaN:H; InN; electrical passivation effects; InN:H; 450 to 500 C; Cl2/CH4/H2/Ar ECR plasma etching; AlN:H; post-etch annealing; etch treatments; initial conductivity

Subjects: Doping and implantation of impurities; Low-field transport and mobility; piezoresistance (semiconductors/insulators); II-VI and III-V semiconductors; Impurity concentration, distribution, and gradients; Semiconductor doping; Electrical conductivity of II-VI and III-V semiconductors; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology

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