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Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

Tapered InGaAs/GaAs MQW lasers with carbon modulation-doping and reduced filamentation

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Highly localised carbon doping is demonstrated within the active region of strained InGaAs/GaAs MQW lasers. As predicted by numerical beam propagation simulations, the smaller linewidth enhancement factor arising from the combination of strain and p-doping leads to reduced filamentation in tapered laser structures, as compared to devices fabricated from otherwise identical epilayer structures containing undoped active regions.

References

    1. 1)
      • J.D. Ralston , S. Weisser , I. Esquivias , E.C. Larkins , J. Rosenzweig , P.J. Tasker , J. Fleissner . Control of differential gain, nonlinear gain, and damping factor forhigh-speed applications of GaAs-based MQW lasers. IEEE J. Quantum Electron. , 1648 - 1659
    2. 2)
      • J.D. Ralston , S. Weisser , K. Eisele , R.E. Sah , E.C. Larkins , J. Rosenzweig , J. Fleissner , K. Bender . Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAspseudomorphic MQW ridge-waveguide lasers. IEEE Photonics Technol. Lett. , 1076 - 1079
    3. 3)
      • A. Schönfelder , S. Weisser , J.D. Ralston , J. Rosenzweig . α-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAsMQW lasers. Electron. Lett. , 1685 - 1686
    4. 4)
      • A. Schönfelder , S. Weisser , J.D. Ralston , J. Rosenzweig . Differential gain, refractive index, and linewidth enhancement factorin high-speed GaAs-based MQW lasers:influence of strain and p-doping. IEEE Photonics Technol. Lett. , 891 - 893
    5. 5)
      • P. Chazan , J.D. Ralston . Influence of linewidth enhancement factor on filamentation in taperedwaveguide amplifiers.
    6. 6)
      • J.D. Ralston , S. Weisser , I. Esquivias , A. Schönfelder , E.C. Larkins , J. Rosenzweig , P.J. Tasker , M. Maier , J. Fleissner . p-dopant incorporation and influence on gain and damping behaviour inhigh-speed GaAs-based strained MQW lasers. Mater. Sci. Eng. , 232 - 236
    7. 7)
      • Arias, J., Ralston, J.D., Esquivias, I., Larkins, E.C., Weisser, S., Rosenzweig, J., Schönfelder, A., Maier, M.: `Carrier profile for In', Proc. 1st Int. Conf. Materials for Microelectronics, 17–19 October 1994, Barcelona, p. 218–219.
    8. 8)
      • A. Jakubowicz , A. Oosenbrug , Th. Horster . Laser operation-induced migration of beryllium at mirrors of GaAs/AlGaAslaser diodes. Appl. Phys. Lett. , 1185 - 1187
    9. 9)
      • K.A. Williams , J. Sarma , I.H. White , R.V. Penty , I. Middlemast , T. Ryan , F.R. Laughton , J.S. Roberts . Q-switched bow-tie lasers for high-energy picosecond pulse generation. Electron. Lett. , 320 - 321
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