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Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures

Influence of Fowler-Nordheim tunnelling current on the strong inversion high-frequency capacitance of thin-insulator N-type metal-oxide-semiconductor structures

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A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator N-type metal-oxide-semiconductor capacitance in the strong inversion region. One mechanism responsible for the increase of capacitance under Fowler-Nordheim tunnelling current injection is described. The theoretical results are compared with the experimental data on thin-insulator N-type metal-oxide-semiconductor capacitors.

Inspec keywords: MOS capacitors; inversion layers; tunnelling

Other keywords: MOS capacitance; strong inversion; capacitance increase; Fowler-Nordheim tunnelling current; high-frequency capacitance; thin-insulator N-type metal-oxide-semiconductor structures

Subjects: Tunnelling: general (electronic transport); Metal-insulator-semiconductor structures; Electrical properties of metal-insulator-semiconductor structures; Capacitors

References

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      • M. Xu , C. Tan , Y. He , Y. Wang . Analysis of the rate of change of inversion charge in thin insulatorp-type metal-oxide-semiconductor structures. Solid-State Electron.
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      • M. Lenzlinger , E.H. Snow . Fowler-Nordheim tunnelling into thermally grown SiO2. J. Appl. Phys. , 278 - 283
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      • M.S. Liang , C. Chang , Y.T. Yeow , C. Hu , R.W. Broderson . Creation and termination of substrate deep depletion in thin oxide MOScapacitors by charge tunnelling. IEEE Electron Device Lett. , 350 - 352
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