Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base

Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

The authors report regenerative switching in an npn Si/Si0.7Ge0.3/Si heterojunction bipolar transistor with a δ-doped base is reported. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base.

Inspec keywords: semiconductor materials; silicon; avalanche breakdown; elemental semiconductors; doping profiles; Ge-Si alloys; heterojunction bipolar transistors

Other keywords: multistep characteristics; switching characteristics; avalanche regime; regenerative switching; emitter-collector bias voltage; Si-SiGe-Si; heterojunction bipolar transistor; I-V curve; quantised energy levels; δ-doped base

Subjects: Bipolar transistors; Semiconductor doping

References

    1. 1)
      • F. Capasso , S. Sen , F. Beltram , L.M. Lunardi , A.S. Vengurlekar , P.R. Smith , N.J. Shah , R.J. Malik , A.Y. Cho . Quantum functional devices: Resonant tunneling transistors, circuitswith reduced complexity,and multiple valued logic. IEEE Trans. , 2065 - 2082
    2. 2)
      • H.C. Tseng , S.S. Li . Regenerative switching characteristics of a novel electrical or opticalbase-controlledAlGaAs/GaAs quantum well bipolar heterojunction transistor. IEEE Electron Device Lett. , 568 - 570
    3. 3)
      • G.D. Shen , D.X. Xu , M. Willander , G.V. Hansson , C. Svensson . Bidirectional bistability in n-p-n Si/GeSi/Si structures. IEEE Electron Device Lett. , 453 - 456
    4. 4)
      • J.J. Chen , G.B. Gao , J.I. Chyi , H. Morkoç . Breakdown behavior of GaAs/AlGaAs HBTs. IEEE Trans. , 2165 - 2172
    5. 5)
      • F.Y. Huang , H. Morkoç . GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunctionphototransistor vertically integrated with a resonant cavity. Appl. Phys. Lett. , 405 - 407
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19950441
Loading

Related content

content/journals/10.1049/el_19950441
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address