Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base

Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base

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The authors report regenerative switching in an npn Si/Si0.7Ge0.3/Si heterojunction bipolar transistor with a δ-doped base is reported. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base.


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