Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes

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Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes

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Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290°C for 20 min, with the advantage of a planar process.

Inspec keywords: microwave diodes; semiconductor device noise; gallium arsenide; isolation technology; III-V semiconductors; annealing; proton effects; ion implantation

Other keywords: DC characteristics; tangential sensitivity; 20 min; GaAs; 290 C; microwave performance; RF performance; SHF; proton implant isolation; RF noise figure; annealing; planar doped barrier diodes

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes; Semiconductor doping; Annealing processes in semiconductor technology

References

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      • Pearton, S.J., Abernathy, C.R., Hobson, W.S., Von Neida, A.E.: `Implant isolation mechanisms in GaAs, AlGaAs, InP and InGaAs', Mat. Res. Soc. Symp. Proc., 1989, 144, p. 433–438.
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