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Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290°C for 20 min, with the advantage of a planar process.
Inspec keywords: microwave diodes; semiconductor device noise; gallium arsenide; isolation technology; III-V semiconductors; annealing; proton effects; ion implantation
Other keywords:
Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes; Semiconductor doping; Annealing processes in semiconductor technology