An improved slot etch technique based on an Si planar doped layer has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable gm with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices.
Inspec keywords: leakage currents; aluminium compounds; electric breakdown; high electron mobility transistors; III-V semiconductors; indium compounds; gallium arsenide; etching
Other keywords:
Subjects: Other field effect devices; Surface treatment (semiconductor technology)
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