GaInAs/GaAs quantum wire laser structures with strong gain coupling defined by reactive ion etching

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GaInAs/GaAs quantum wire laser structures with strong gain coupling defined by reactive ion etching

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Gain-coupled GaInAs/GaAs quantum wire lasers have been realised with wire widths down to 70 nm by low-damage dry etching. Very strong gain modulation has been achieved by etching through the active layers. The optically pumped laser structures show singlemode operation at 77 K.

Inspec keywords: optical modulation; sputter etching; quantum well lasers; gallium arsenide; optical pumping; laser modes; III-V semiconductors; aluminium compounds

Other keywords: 77 K; reactive ion etching; gain coupling; single-mode operation; gain modulation; optical pumping; active layers; GaInAs/GaAs quantum wire laser; 70 nm; GaInAs-GaAs; dry etching

Subjects: Surface treatment (semiconductor technology); Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Semiconductor lasers

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