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Integration process for photonic integrated circuits using plasma damage induced layer intermixing

Integration process for photonic integrated circuits using plasma damage induced layer intermixing

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Published

A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.

Inspec keywords: aluminium compounds; point defects; optical losses; optical planar waveguides; waveguide lasers; quantum well lasers; ion beam mixing; gallium arsenide; III-V semiconductors

Other keywords: point defects; ion bombardment damage; passive waveguides; bandgap tuned lasers; GaAs-AlGaAs; plasma damage; quantum-well intermixing process; extended cavity lasers; photonic integrated circuits

Subjects: Lasing action in semiconductors; Design of specific laser systems; Semiconductor lasers; Integrated optics; Ion beam effects; Integrated optics; Chemical interdiffusion in solids

References

    1. 1)
      • B.S. Ooi , A.C. Bryce , C.D.W. Wilkinson , J.H. Marsh . Study of reactive ion etching-induced damage in GaAs/AlGaAs structuresusing a quantumwell intermixing probe. Appl. Phys. Lett.
    2. 2)
      • S.R. Andrew , J.H. Marsh , M.C. Holland , A.H. Kean . Quantum well laser with integrated passive waveguide fabricated by neutralimpurity disordering. IEEE Photonics Technol. Lett.
    3. 3)
      • J. Werner , T.P. Lee , E. Kapon , E. Colas , N.G. Stoffel , S.A. Schwarz , L.C. Schwarts , N.C. Andreadakis . Single and double quantum well lasers with a monolithically integratedpassive section. Appl. Phys. Lett.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19950342
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