Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes

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Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes

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Modification of the effective conduction-band offset in InGaAs/InAlAs isotype heterojunctions by incorporating, during epitaxial growth, a doping dipole formed by alternate n+, p+ delta (δ-) doping is demonstrated. Greatly improved current rectification is found when the dipole polarity enhances the potential barrier.

Inspec keywords: semiconductor diodes; aluminium compounds; semiconductor doping; doping profiles; indium compounds; rectification; solid-state rectifiers; molecular beam epitaxial growth; p-n heterojunctions; III-V semiconductors; conduction bands

Other keywords: epitaxial growth; doping dipole; InGaAs-InAlAs; conduction band offset; delta doping; isotype heterojunctions; current rectification; heterobarrier diodes; potential barrier enhancement

Subjects: Junction and barrier diodes; Epitaxial growth; Semiconductor doping; Semiconductor junctions

References

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      • A. Chandra , L.F. Eastman . Rectification at n-n GaAs:(Ga,Al)As heterojunctions. Electron. Lett. , 90 - 91
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