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Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes

Delta-doping-enhanced InGaAs/InAlAs heterobarrier diodes

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Modification of the effective conduction-band offset in InGaAs/InAlAs isotype heterojunctions by incorporating, during epitaxial growth, a doping dipole formed by alternate n+, p+ delta (δ-) doping is demonstrated. Greatly improved current rectification is found when the dipole polarity enhances the potential barrier.

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