Polarisation selectivity in ordered GaInP2 vertical cavity surface-emitting lasers
Polarisation selectivity in ordered GaInP2 vertical cavity surface-emitting lasers
- Author(s): A.T. Meney ; E.P. O'Reilly ; K.J. Ebeling
- DOI: 10.1049/el:19950308
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- Author(s): A.T. Meney 1 ; E.P. O'Reilly 1 ; K.J. Ebeling 2
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View affiliations
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Affiliations:
1: Department of Physics, University of Surrey, Guildford, United Kingdom
2: Department of Optoelectronics, University of Ulm, Ulm, Germany
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Affiliations:
1: Department of Physics, University of Surrey, Guildford, United Kingdom
- Source:
Volume 31, Issue 6,
16 March 1995,
p.
461 – 462
DOI: 10.1049/el:19950308 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors propose that the incorporation of chemically ordered GaInP2 layers into the active region of surface-emitting lasers will allow strong selectivity between the two orthogonal polarisation directions, reducing noise and enabling stable polarisation control.
Inspec keywords: gallium compounds; indium compounds; light polarisation; ternary semiconductors; laser noise; semiconductor lasers; surface emitting lasers
Other keywords:
Subjects: Laser resonators and cavities; Laser resonators and cavities; Lasing action in semiconductors; Semiconductor lasers
References
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