A new MOS-gated thyristor structure, in which a BRT section is incorporated into the dual-channel EST (DC-EST) to enhance maximum controllable current densities, is presented. This structure has been demonstrated experimentally to have a maximum controllable current density about 2.5 times greater than that of the DC-EST, with only a small increase in the on-state voltage drop.
References
-
-
1)
-
Bhalla, A., Chow, T.P.: `ESTD: An emitter switched thyristor with a diverter', Proc. DRC, 1994.
-
2)
-
Baliga, B.J., Adler, M.S., Gray, P.V., Love, R.P., Zommer, N.: `The insulated gate transistor', IEDM Tech. Dig., 1982, p. 264–267.
-
3)
-
M. Nandakumar ,
B.J. Baliga ,
M.S. Shekar ,
S. Tandon ,
A. Reisman
.
A new MOS-gated power thyristor structure with turn-off achieved bycontrolling the base resistance.
IEEE Electron Device Lett.
,
5 ,
227 -
229
-
4)
-
M.S. Shekar ,
M. Nandakumar ,
B.J. Baliga
.
An emitter switched thyristor with base resistance control.
IEEE Electron Device Lett.
,
6 ,
280 -
282
-
5)
-
M.S. Shekar ,
B.J. Baliga ,
M. Nandakumar ,
S. Tandon ,
A. Reisman
.
High-voltage current saturation in emitter switched thyristors.
IEEE Electron Device Lett.
,
387 -
389
-
6)
-
M.S. Shekar ,
B.J. Baliga ,
M. Nandakumar ,
S. Tandon ,
A. Reisman
.
Characteristics of emitter switched thyristor.
IEEE Trans.
,
7 ,
1619 -
1623
-
7)
-
Bauer, F., Roggwiler, P., Aemmer, A., Fichtner, W., Vuilleumier, R., Moret, J.M.: `Design elements of MOS controlled thyristor elements', IEDM Tech. Dig., 1989, p. 297–300.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19950300
Related content
content/journals/10.1049/el_19950300
pub_keyword,iet_inspecKeyword,pub_concept
6
6