3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wireless receivers

3 V, 28 mW Si-bipolar front-end IC for 900 MHz homodyne wireless receivers

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A 900 MHz homodyne receiver front-end bipolar chip is presented. The circuit consists of a low-noise amplifier and two double-balanced mixers for in-phase and quadrature channels. The power supply voltage is 3 V and power dissipation is 28 mW. The measured performance includes 33.5 dB voltage gain, a 3.1 dB noise figure, –13 dBm input referred IP3, –95 dB LO leakage into the RF port on wafer probing, and less than 0.1 dB I/Q magnitude imbalance.


    1. 1)
      • Sevenhans, J.: `An integrated Si bipolar RF tranceiver for a zero IF 900 MHz GSM digitalmobile radio front-endof a hand portable phone', Proc. IEEE 1991 CICC, p. 7.7.1–7.7.4.
    2. 2)
      • J.F. Wilson . A single-chip VHS and UHF receiver for radio paging. IEEE J. Solid-State Circuits , 12 , 1944 - 1950
    3. 3)
      • R.G. Meyer . A 1-GHz BiCMOS RF front-end IC. IEEE J. Solid-State Circuits , 3 , 350 - 355

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