Direct measurement of doping density and barrier lowering effect with bias in quantum wells

Direct measurement of doping density and barrier lowering effect with bias in quantum wells

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An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.


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