High power antiguided laser array fabricated using a superlattice structure

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High power antiguided laser array fabricated using a superlattice structure

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The operation of antiguided array lasers is dependent on the creation of an effective refractive index step between the antiguide core and the interelement regions. The authors describe a novel technique, using zinc diffusion to disorder a superlattice, for creating the necessary index step in a 10 element antiguided laser array operating at 0.860 µm. Output powers approach 400 mW per facet into a 3° (FWHM) beam. Use of this fabrication technique removes the need for overgrowth.

Inspec keywords: diffusion; semiconductor superlattices; aluminium compounds; waveguide lasers; gallium arsenide; semiconductor laser arrays; III-V semiconductors; refractive index; optical fabrication

Other keywords: GaAs-AlGaAs; semiconductor superlattice disordering; 0.86 mum; antiguided array lasers; zinc diffusion; output powers; superlattice structure; antiguide core; fabrication technique; high power antiguided laser array; FWHM beam; effective refractive index step; interelement regions; 400 mW; index step

Subjects: Diffusion and ionic conduction in solids; Semiconductor superlattices, quantum wells and related structures; Lasing action in semiconductors; Optical properties of nonmetallic thin films; Optical fabrication, surface grinding; Semiconductor lasers; Design of specific laser systems

References

    1. 1)
      • D. Botez , L.J. Mawst , G.L. Peterson , T.J. Roth . Phase-locked arrays of antiguides: Modal content and discrimination. IEEE J. Quantum Electron. , 482 - 495
    2. 2)
      • F.R. Laughton , J.H. Marsh , C. Button . Antiguided laser array structure at 1.48 µm fabricated withoutovergrowth. Electron. Lett. , 303 - 305
    3. 3)
      • J.P. Leburton , K. Hess , N. Holonyak , J.J. Coleman , M. Camras . Index of refraction of AlAs-GaAs superlattices. J. Appl. Phys. , 7 , 4230 - 4231
    4. 4)
      • D. Botez . High-power monolithic phase-locked arrays of antiguided semiconductor diode lasers. IEE Proc. J. , 14 - 23
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