Observation of current spikes in thin oxide MOS capacitor

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Observation of current spikes in thin oxide MOS capacitor

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0.1 µA cm-2 current spikes have been reported recently in MOS capacitors. The authors attribute this observation to current transients, arising from the staircase sweep of the gate bias, and explain it in terms of the charging and discharging of the silicon space charge layer, and recombination of electrons and holes near the interface.

Inspec keywords: transients; electric current measurement; MOS capacitors; insulating thin films; electron-hole recombination

Other keywords: staircase sweep; current spikes; electron-hole recombination; MOS capacitor; thin oxide; space charge layer; current transients

Subjects: Current measurement; Capacitors; Metal-insulator-semiconductor structures

References

    1. 1)
      • J. Müller , B. Schiek . Transient responses of a pulsed MIS-capacitor. Solid-State Electron. , 1319 - 1332
    2. 2)
      • F.P. Heiman . Thin film silicon-on-sapphire deep depletion MOS transistors. IEEE Trans. , 12 , 855 - 862
    3. 3)
      • E.H. Nicollian , J.R. Brews . (1992) MOS (metal oxide semiconductor) physics and technology.
    4. 4)
      • Z.Q. Yao , H.B. Harrison , S. Dimitrijev , D. Sweatman , Y.T. Yeow . High quality ultrathin dielectric films grown on silicon in a nitricoxide ambient. Appl. Phys. Lett. , 26 , 3584 - 3586
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