Efficient 3.3 µm light emitting diodes for detecting methane gas at room temperature
Efficient 3.3 µm light emitting diodes for detecting methane gas at room temperature
- Author(s): M.K. Parry and A. Krier
- DOI: 10.1049/el:19941360
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- Author(s): M.K. Parry 1 and A. Krier 1
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View affiliations
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Affiliations:
1: Applied Physics Division, Lancaster University, Lancaster, United Kingdom
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Affiliations:
1: Applied Physics Division, Lancaster University, Lancaster, United Kingdom
- Source:
Volume 30, Issue 23,
10 November 1994,
p.
1968 – 1969
DOI: 10.1049/el:19941360 , Print ISSN 0013-5194, Online ISSN 1350-911X
In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3 µm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.
Inspec keywords: optical sensors; III-V semiconductors; light emitting diodes; gas sensors; gallium arsenide; indium compounds
Other keywords:
Subjects: Light emitting diodes; Chemical variables measurement; Chemical sensors
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