An InP Gunn device designed for fundamental-mode operation in D-band was mounted on a diamond heatsink for improved heat dissipation. The highest RF output power measured was 56 mW at 128 GHz and 49 mW at 132 GHz with DC-to-RF conversion efficiencies above 2%. Typical phase noise is well below –100 dBc/Hz at 500 kHz off the carrier. Devices tested in second-harmonic mode yielded more than 0.3 mW between 280 and 290 GHz.
Inspec keywords: Gunn oscillators; phase noise; semiconductor device noise; indium compounds; millimetre wave oscillators; III-V semiconductors; semiconductor device testing
Other keywords:
Subjects: II-VI and III-V semiconductors; Oscillators; Bulk effect devices; Solid-state microwave circuits and devices
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