Application of voltage contrast to potential mapping of polycrystalline semiconducting ceramics

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Application of voltage contrast to potential mapping of polycrystalline semiconducting ceramics

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Voltage contrast was applied to the potential mapping of semiconducting ceramics. It was shown that electrical barriers are located at grain boundaries. Barrier heights were measured quantitatively in the voltage probing mode with a spacing limit of 2 µm and a 20 mV precision. From these data, it can be concluded that eddy currents are trapped essentially within each grain.

Inspec keywords: magnetic semiconductors; ferrites; eddy currents; ceramics; grain boundaries; scanning electron microscopy

Other keywords: SEM; voltage probing mode; eddy currents; 20 mV; MnZnFe2O4; voltage contrast; polycrystalline semiconducting ceramics; barrier heights; 2 micron; grain boundaries; potential mapping; MnZn ferrite

Subjects: Ceramics and refractories (engineering materials science); Ferrites and garnets; Magnetic semiconductors; Grain and twin boundaries; Oxide and ferrite semiconductors; Electron and ion microscopes and techniques; Electron microscopy determinations of structures

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