Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

0.2 µm AlSb/InAs HEMTs with 5 V gate breakdown voltage

0.2 µm AlSb/InAs HEMTs with 5 V gate breakdown voltage

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Published

DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.2 µm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation.

Inspec keywords: indium compounds; high electron mobility transistors; aluminium compounds; S-parameters; semiconductor device models; electric breakdown; III-V semiconductors; microwave field effect transistors; impact ionisation; leakage currents

Other keywords: 5 V; reverse gate characteristics; 110 GHz; 0.2 micron; impact ionisation; microwave measurements; HEMT; unilateral gain reduction; AlSb-InAs; equivalent circuit modelling; DC measurements; gate-drain breakdown voltages; leakage current

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices; Solid-state microwave circuits and devices

References

    1. 1)
      • Zhou, G., Fischer-Colbrie, A., Harris, J.S.: `I-V kink in InAlAs/InGaAs MODFETs due to weak impact ionization processin theInGaAs channel', Proc. Sixth Int. Conf. on Indium Phosphide and Related Materials, 1994, p. 435–438.
    2. 2)
      • X. Li , K.F. Longenbach , Y. Wang , W.I. Wang . High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors. IEEE Electron. Device Lett. , 192 - 194
    3. 3)
      • C.R. Bolognesi , E.J. Caine , H. Kroemer . Improved charge control and frequency performance in InAs/AlSb-basedheterostructurefield-effect transistors. IEEE Electron Device Lett. , 16 - 18
    4. 4)
      • J.B. Boos , W. Kruppa , B.V. Shanabrook , D. Park , J.L. Davis , H.B. Dietrich . Impact ionization in high-output conductance region of 0.5 µm AlSb/InAsHEMTs. Electron. Lett. , 1888 - 1890
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19941316
Loading

Related content

content/journals/10.1049/el_19941316
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address