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Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides

Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides

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Photoluminescence studies of low-loss SiON waveguides deeply (2.8 MeV) implanted with erbium at concentrations up to 1 atm.% are reported. Rapid thermal annealing at 900°C is found to repair most of the implantation damage and results in a 5.3 ms 4I13/2 lifetime for 0.25 atm.% Er concentration. Measurements in 1 atm.% doped samples show significant erbium ion-ion interactions.

Inspec keywords: rapid thermal processing; photoluminescence; integrated optics; optical workshop techniques; ion implantation; erbium; radiative lifetimes; optical waveguides; silicon compounds; annealing

Other keywords: implantation damage; SiON:Er; photoluminescence; erbium ion-ion interactions; rapid thermal annealing; doped samples; 900 C; low-loss silicon oxynitride waveguides; 2.8 MeV; deep high-dose erbium implantation; lifetime

Subjects: Optical waveguides; Integrated optics; Optical fabrication, surface grinding; Optical waveguides and couplers; Integrated optics

References

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      • G.N. van den Hoven , E. Snoeks , E.A. Polman , J.M. van Uffelen , Y.S. Oei , M.K. Smit . Photoluminescence characterization of Er-implanted Al2O3films. Appl. Phys. Lett. , 24 , 3065 - 3067
    2. 2)
      • D.S. Walker , W.M. Reichert , C.J. Berry . Silicon oxynitride and silicon dioxide thin-film integrated optical waveguides:in searchof low loss, nonfluorescent, reusable glass waveguides. Appl. Spectrosc. , 9 , 1437 - 1441
    3. 3)
      • G. Nykolak , P.C. Becker , J. Shmulovic , Y.H. Wong , D.J. Digiovanni , A.J. Bruce . Concentration-dependent 4I13/2 lifetimes in Er3+-dopedfibers andEr3+-doped planar waveguides. IEEE Photonics Technol. Lett. , 9 , 1014 - 1016
    4. 4)
      • O. Lumholt , H. Bernas , A. Chabli , J. Chaumont , G. Grand , S. Valette . Low-energy erbium implanted Si3N4/SiO2/Siwaveguides. Electron. Lett. , 24 , 2242 - 2243
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19941294
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