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Gunn effect and high-injection phenomenon in heterojunction bipolar transistors

Gunn effect and high-injection phenomenon in heterojunction bipolar transistors

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The transferred-electron effect in the collector region of heterojunction bipolar transistors is investigated. Conditions necessary for observation of Gunn instabilities are analysed and it is shown that stability of the conventional III-V HBT is ensured by the Kirk effect which occurs at a similar threshold current density as the Gunn effect.

Inspec keywords: Gunn effect; current density; stability; heterojunction bipolar transistors

Other keywords: stability; III-V HBT; Gunn instabilities; transferred-electron effect; threshold current density; high-injection phenomenon; Kirk effect; heterojunction bipolar transistors; Gunn effect; collector region

Subjects: Bipolar transistors

References

    1. 1)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    2. 2)
      • J.B. Gunn . Microwave oscillation of current in III-IV semiconductors. Solid State Commun. , 88 - 91
    3. 3)
      • C.T. Kirk . A theory of transistor cutoff frequency (fT) falloffat high current densities. IRE Trans. Electron Devices , 164 - 174
    4. 4)
      • V.A. Posse , B. Jalali . Gunn effect in heterojunction bipolar transistors. Electron. Lett. , 1183 - 1184
    5. 5)
      • M.P. Shaw , H.L. Grubin , P.R. Solomon . (1979) The Gunn-Hilsum effect.
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