High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters

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High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-area emitters

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Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.

Inspec keywords: wafer bonding; gallium compounds; light emitting diodes; indium compounds; aluminium compounds; III-V semiconductors

Other keywords: AlGaInP-GaP; DC and pulsed operation; pulsed operation; 600 to 615 nm; 265 mW; semiconductor wafer bonding; 475 mW; large-area light-emitting diodes; luminous flux

Subjects: Light emitting diodes; Semiconductor technology

References

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