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38 GHz, coplanar waveguide GaAs MMIC amplifier

38 GHz, coplanar waveguide GaAs MMIC amplifier

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A GaAs MMIC coplanar waveguide amplifier is presented. It is realised on a 100 µm-thick substrate, thus leading to compatibility with microstrip circuits. An amplifier stabilisation technique is presented. It is shown that very good agreement between predictions and measurements may be obtained without any time-expensive bi- (tri-) dimensional electromagnetic simulation. The amplifier gain is ~15 dB at 38 GHz, and return losses are better than –18 dB.

References

    1. 1)
      • N. Ishihara , E. Sano , Y. Imai , H. Kikuchi , Y. Yamane . A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFETamplifier IC module. IEEE J. Solid-State Circuits , 554 - 562
    2. 2)
      • Aikawa, M., Ogawa, H., Sugeta, T.: `MMIC progress in Japan', IEEE Microwave Millimeter-Wave Monolithic Symp. Dig., 1989, p. 1–6.
    3. 3)
      • Murgulescu, M.-H., Legaud, P., Moisan, E., Penard, E., Goloubkoff, M., Zaquine, I.: `New small size, wideband 180° ring couplers: theory and experiment', European Microwave Conf., 1994, To be presented.
    4. 4)
      • M. Riaziat , R. Majidy-Ahy , I.-J. Feng . Propagation modes and dispersion characteristics of coplanar waveguides. IEEE Trans. , 245 - 251
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