Laser diodes emitting at 0.98 µm with epitaxially grown nonabsorbing facets have been fabricated. Catastrophic facet damage is not observed at thermally limited powers as high as 500 mW. Accelerated lifetesting at 100 mW and 50°C shows the devices to have good reliability characteristics.
Inspec keywords: semiconductor lasers; reliability; semiconductor epitaxial layers
Other keywords:
Subjects: Maintenance and reliability; Reliability; Semiconductor lasers; Lasing action in semiconductors; Optoelectronics manufacturing
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19941177
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content/journals/10.1049/el_19941177
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