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Calculation of shift of avalanche transit time phase delay due to optically injected carriers in indium phosphide avalanche diodes

Calculation of shift of avalanche transit time phase delay due to optically injected carriers in indium phosphide avalanche diodes

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Published

A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes.

Inspec keywords: negative resistance; solid-state microwave devices; indium compounds; avalanche diodes; transit time devices; III-V semiconductors

Other keywords: microwave properties; InP; electron injection; depletion layer; indium phosphide diodes; photogenerated hole leakage current; computer calculation; optically injected carriers; phase shift; numerical simulation; avalanche transit time phase delay; negative resistance; hole injection

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes

References

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      • Roy, S.K., Banerjee, J.P., Pati, S.P.: `A computer analysis of the distribution of high frequency negative resistancein the depletion layer of Impatt diodes', Proc. Numerical Analysis of Semiconductor Devices and IntegratedCircuits, NASECODE IV, 1985, p. 494.
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