Impurity removal by chemical beam etching of GaAs

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Impurity removal by chemical beam etching of GaAs

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The effectiveness of the chemical beam etching process to remove dopant impurities from GaAs is investigated. Structures containing Si and Be δ-doped as well as uniformly Si-doped layers were subjected to etching and the dopant distributions were monitored by secondary ion mass spectrometry. While Be is shown to be promptly removed from GaAs by this technique, Si is shown to chemically react much less effectively to the etching process.

Inspec keywords: sputter etching; secondary ion mass spectra; III-V semiconductors; doping profiles; gallium arsenide

Other keywords: GaAs:Si; GaAs:Be; dopant distributions; chemical beam etching; δ-doped layers; impurity removal; uniformly doped layers; secondary ion mass spectrometry

Subjects: II-VI and III-V semiconductors; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology; Semiconductor doping; Impurity concentration, distribution, and gradients

References

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