A semiconductor optical amplifier, a grating demultiplexer and a photodiode array were integrated in InGaAsP/InP to form a WDM receiver chip. 10 wavelength channels (TE or TM polarisation) in the 1.54 µm wavelength region with a channel spacing of 2 nm were detected with a crosstalk of less than –20 dB and a responsivity of up to 8 A/W.
Inspec keywords: optical receivers; wavelength division multiplexing; multiplexing equipment; gallium arsenide; indium compounds; integrated optoelectronics; crosstalk; III-V semiconductors
Other keywords:
Subjects: Integrated optoelectronics; Other switching centres; Optical communication
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