High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

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High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

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A three-terminal δ-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

Inspec keywords: negative resistance; hot electron transistors; semiconductor growth; gallium arsenide; field effect transistors; III-V semiconductors; chemical vapour deposition; semiconductor doping

Other keywords: power handling; low-pressure metal organic chemical vapour deposition; transconductance; GaAs; fabrication; peak-to-valley current ratio; real-space transfer; growth; charge injection; three-terminal δ-doped GaAs negative resistance field-effect transistor

Subjects: Semiconductor doping; Other field effect devices; Chemical vapour deposition

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