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High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

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A three-terminal δ-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

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