Low threshold, large To injection laser emission from (InGa)As quantum dots

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Low threshold, large To injection laser emission from (InGa)As quantum dots

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Published

Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.

Inspec keywords: indium compounds; III-V semiconductors; gallium arsenide; semiconductor lasers

Other keywords: zero-dimensional states; laser diodes; shallow mesa stripe; pseudomorphic In0.5Ga0.5As layer; In0.5Ga0.5As; morphological transformation; (InGa)As quantum dots; injection laser; low threshold laser; characteristic temperature

Subjects: Lasing action in semiconductors; Semiconductor lasers

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