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10000 h, 30–50 mW CW operation of 670–690 nm visible laser diodes

10000 h, 30–50 mW CW operation of 670–690 nm visible laser diodes

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The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the non-window 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised.

References

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      • T. Katsuyama , I. Yoshida , J. Shinkai , J. Hashimoto . High temperature (>150°C) and low threshold current operationof AlGaInP/GaxIn1-xPstrained multiple quantum well visible laser diodes. Appl. Phys. Lett. , 3351 - 3353
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