10000 h, 30–50 mW CW operation of 670–690 nm visible laser diodes
10000 h, 30–50 mW CW operation of 670–690 nm visible laser diodes
- Author(s): A. Shima ; H. Watanabe ; H. Tada ; S. Arimoto ; T. Kamizato ; K. Kadoiwa ; E. Omura ; M. Otsubo
- DOI: 10.1049/el:19940912
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- Author(s): A. Shima 1 ; H. Watanabe 1 ; H. Tada 1 ; S. Arimoto 1 ; T. Kamizato 1 ; K. Kadoiwa 1 ; E. Omura 1 ; M. Otsubo 1
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View affiliations
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Affiliations:
1: Mitsubishi Electric Corporation, Itami City, Japan
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Affiliations:
1: Mitsubishi Electric Corporation, Itami City, Japan
- Source:
Volume 30, Issue 16,
4 August 1994,
p.
1293 – 1294
DOI: 10.1049/el:19940912 , Print ISSN 0013-5194, Online ISSN 1350-911X
The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the non-window 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised.
Inspec keywords: III-V semiconductors; aluminium compounds; semiconductor quantum wells; gallium compounds; reliability; indium compounds; semiconductor lasers
Other keywords:
Subjects: Design of specific laser systems; II-VI and III-V semiconductors; Maintenance and reliability; Semiconductor junctions; Optoelectronics manufacturing; Lasing action in semiconductors; Reliability; Semiconductor lasers
References
-
-
1)
- A. Shima , H. Saito , H. Matsubara , H. Kumabe . Ten-thousand-hours CW operation of 780 nm high-power AlGaAs laser with thin-tapered thickness active layer. Electron. Lett. , 1290 - 1291
-
2)
- K. Nitta , K. Itaya , K. Nishikawa , M. Ishikawa , M. Okajima , G. Hatakoshi . High-power (106 mW) CW operation of transverse-mode stabilised InGaAlPlaser diodes with strained In0.62Ga0.38P active layer. Electron. Lett. , 1660 - 1661
-
3)
- Arimoto, S., Watanabe, H., Yasuda, M., Kadoiwa, K., Omura, E., Aiga, M., Ikeda, K.: `Realization of high-power operation in AlGaInP lasers by employing multiplequantum barrier and strained active layer', Proc. SPIE, Laser Diode Technology and Applications, 1993, 1850, p. 262–269.
-
4)
- T. Katsuyama , I. Yoshida , J. Shinkai , J. Hashimoto . High temperature (>150°C) and low threshold current operationof AlGaInP/GaxIn1-xPstrained multiple quantum well visible laser diodes. Appl. Phys. Lett. , 3351 - 3353
-
5)
- M. Ettenberg , D. Botex . High-power diode laser for optical recording with operating lifetimesin excess of 10000 h. Electron. Lett. , 153 - 154
-
6)
- S. Arimoto , M. Yasuda , A. Shima , K. Kadoiwa , T. Kamizato , H. Watanabe , E. Omura , M. Aiga , K. Ikeda , S. Mitsui . 150 mW fundamental-transverse-mode operation of 670 nm window laser diode. IEEE J. Quantum Electron. , 1874 - 1879
-
1)