High power, reliable 645 nm compressively strained GaInP/GaAlInP laser diodes

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High power, reliable 645 nm compressively strained GaInP/GaAlInP laser diodes

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CW output powers in excess of 1 W and reliable CW output powers of 250 mW at room temperature from double quantum well compressively strained GaInP/GaAlInP laser diodes with an emission wavelength of 645 nm were demonstrated. An anomalous dependence of threshold current density and wavelength on GaInP/GaAlInP laser diode stripe width was characterised.

Inspec keywords: semiconductor quantum wells; gallium compounds; semiconductor lasers; III-V semiconductors; indium compounds

Other keywords: 645 nm; emission wavelength; threshold current density; 250 mW; CW output powers; laser diode stripe width; compressively strained GaInP/GaAlInP laser diodes; GaInP-GaAlInP; double quantum well

Subjects: Semiconductor junctions; Design of specific laser systems; Semiconductor lasers; Lasing action in semiconductors

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