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Novel ELFIN (embedded-metal-layer process for fully integrated NOR) cell for 16/64 Mbit flash EEPROM

Novel ELFIN (embedded-metal-layer process for fully integrated NOR) cell for 16/64 Mbit flash EEPROM

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A novel cell structure named ELFIN (embedded-metal-layer process for fully integrated NOR) is proposed for the 16/64 Mbit flash EEPROM. The ELFIN cell introduces the self-aligned metal drain-pad and source-line technology. It is demonstrated in a 3.0 µm2 cell using the 0.6 µm design rule, i.e. a 25% reduction in cell size is attained compared with the conventional NOR-type cell with the same design rule. Excellent electrical characteristics of programming, erasing and endurance are achieved.

Inspec keywords: EPROM; integrated memory circuits; CMOS integrated circuits

Other keywords: fully integrated NOR cell; 64 Mbit; embedded-metal-layer process; ELFIN cell; 0.6 micron; flash EEPROM; selfaligned metal drain-pad; 16 Mbit; source-line technology; electrical characteristics

Subjects: CMOS integrated circuits; Memory circuits; Semiconductor storage

References

    1. 1)
      • Masuoka, F., Momodomi, M., Iwata, Y., Shirota, R.: `New ultra high density EPROM and flash EEPROM with NAND structure cell', IEEE IEDM Tech. Dig., 1987, p. 552–555.
    2. 2)
      • Kume, H., Kato, M., Adachi, T., Tanaka, T., Sasaki, T., Okazaki, T., Miyamoto, T., Saeki, S., Ohji, Y., Ushiyama, M., Yugami, J., Morimoto, T., Nishisa, T.: `A 1.28 µm', IEEE IEDM Tech. Dig., 1992, p. 991–993.
    3. 3)
      • Onoda, H., Kunori, Y., Kobayashi, S., Ohi, M., Fukumoto, A., Ajika, N., Miyoshi, H.: `A novel cell structure suitable for a 3 volt operation,sector erase flash memory', IEEE IEDM Tech. Dig., 1992, p. 599–602.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19940843
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