Novel ELFIN (embedded-metal-layer process for fully integrated NOR) cell for 16/64 Mbit flash EEPROM

Novel ELFIN (embedded-metal-layer process for fully integrated NOR) cell for 16/64 Mbit flash EEPROM

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A novel cell structure named ELFIN (embedded-metal-layer process for fully integrated NOR) is proposed for the 16/64 Mbit flash EEPROM. The ELFIN cell introduces the self-aligned metal drain-pad and source-line technology. It is demonstrated in a 3.0 µm2 cell using the 0.6 µm design rule, i.e. a 25% reduction in cell size is attained compared with the conventional NOR-type cell with the same design rule. Excellent electrical characteristics of programming, erasing and endurance are achieved.


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