Proton isolation of Si δ-doped GaAs
Proton isolation of Si δ-doped GaAs
- Author(s): K. Billen ; M.J. Kelly ; D. Lancefield ; R.M. Gwilliam ; D.A. Ritchie ; S. Gymer ; G.A.C. Jones ; E.H. Linfield ; A.P. Churchill
- DOI: 10.1049/el:19940832
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- Author(s): K. Billen 1 ; M.J. Kelly 1 ; D. Lancefield 1 ; R.M. Gwilliam 2 ; D.A. Ritchie 3 ; S. Gymer 3 ; G.A.C. Jones 3 ; E.H. Linfield 3 ; A.P. Churchill 3
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View affiliations
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Affiliations:
1: Department of Physics, University of Surrey, Guildford, United Kingdom
2: Department of Electronics and Electrical Engineering, University of Surrey, Guildford, United Kingdom
3: Department of Electronics and Electrical Engineering, Cavendish Laboratory, Cambridge, United Kingdom
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Affiliations:
1: Department of Physics, University of Surrey, Guildford, United Kingdom
- Source:
Volume 30, Issue 16,
4 August 1994,
p.
1359 – 1360
DOI: 10.1049/el:19940832 , Print ISSN 0013-5194, Online ISSN 1350-911X
The use of proton isolation to define Si δ-doped GaAs device structures is reported and was found to be effective in defining δ-doped layers with a two-dimensional electron density of up to 6.8 × 1012 cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices.
Inspec keywords: semiconductor doping; doping profiles; ion implantation; III-V semiconductors; silicon; gallium arsenide
Other keywords:
Subjects: Semiconductor doping; II-VI and III-V semiconductors
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