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Proton isolation of Si δ-doped GaAs

Proton isolation of Si δ-doped GaAs

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The use of proton isolation to define Si δ-doped GaAs device structures is reported and was found to be effective in defining δ-doped layers with a two-dimensional electron density of up to 6.8 × 1012 cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices.

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