Stable singlemode operation of 0.98 µm GaInAs/GaInAsP/GaInP buried ridge stripe laser with AlGaInP current blocking layer

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Stable singlemode operation of 0.98 µm GaInAs/GaInAsP/GaInP buried ridge stripe laser with AlGaInP current blocking layer

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By using a AlGaInP current blocking layer lattice-matched to GaAs, a GaInAs/GaInAsP/GaInP strained single quantum well (SSQW) buried ridge stripe laser emitting at 0.98 µm wavelength region was fabricated and successful operation was achieved for the first time. Single-longitudinal-mode operation with single-lobed far-field patterns was obtained at up to an output power of 50 mW for the uncoated laser (4 × 1000 µm2) under continuous-wave (CW) operation at room temperature. In addition, CW operation beyond 50 mW output was obtained at up to 100°C for the same device.

Inspec keywords: semiconductor quantum wells; gallium arsenide; III-V semiconductors; indium compounds; semiconductor lasers

Other keywords: output power; AlGaInP current blocking layer; 50 mW; continuous-wave operation; AlGaInP; 25 to 100 degC; 0.98 micron; uncoated laser; single-longitudinal-mode operation; GaInAs-GaInAsP-GaInP; GaInAs/GaInAsP/GaInP buried ridge stripe laser; singlemode operation; single-lobed far-field patterns; strained single quantum well

Subjects: Design of specific laser systems; Semiconductor lasers; Lasing action in semiconductors

References

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