SiGe-HBTs with high fT at moderate current densities

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SiGe-HBTs with high fT at moderate current densities

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Silicon-germanium heterojunction bipolar transistors (SiG-HBTs) have been developed with regard to high cutoff frequencies within a wide collector current range. Unity current gain frequencies fT as high as 116 GHz were obtained at a collector current density of 2 × 105 A/cm2. In addition, the FWHM of cutoff frequency fT against collector current exceeds one and a half decades. Calculations indicate that the ratio of the collector to emitter area essentially determines the current density range of a high frequency HBT.

Inspec keywords: semiconductor materials; Ge-Si alloys; heterojunction bipolar transistors; current density; solid-state microwave devices

Other keywords: 116 GHz; SiGe; HBTs; current density range; microwave operation; high cutoff frequencies

Subjects: Bipolar transistors; Solid-state microwave circuits and devices

References

    1. 1)
      • Kasper, E., Gruhle, A., Kibbel, H.: `High speed SiGe-HBT with very low base sheet resistivity', Tech. Dig. IEDM 93, 1993, p. 79–81.
    2. 2)
      • Crabbé, E. F., Meyerson, B. S., Stork, J. M. C., Harame, D. L.: `Vertical profile optimization of very high frequency epitaxialSi- and SiGe-base bipolar transistors', Tech. Dig. IEDM 93, 1993, p. 83–86.
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      • U. Erben , H. Schumacher , A. Schüppen . Influence of parasitic circuits elements on Si/SiGe HBTs microwave noise. Electron. Lett.
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      • A. Gruhle , H. Kibbel , U. Erben , E. Kasper . 91 GHz SiGe HBTs grown by MBE. Electron. Lett. , 4 , 415 - 416
    5. 5)
      • A. Gruhle , H. Kibbel , U. König , U. Erben , E. Kasper . MBE-grown Si/SiGe HBT's with high β, fT and fmax. IEEE Electron Device Lett. , 4 , 206 - 208
    6. 6)
      • Crabbé, E., Meyerson, B., Harame, D., Stork, J., Megdanis, A., Cotte, J.: `113 GHz-f', Device Research Conf., 1993.
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      • G. Gao , Z. Fan , H. Moroç . Analysis of cut-off frequency roll-off at high current inSiGe double-heterojunction bipolar transistors. Appl. Phys. Lett. , 25 , 2951 - 2953
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